价(与氧化铍比较)InstituteofMicroelectronics53InstituteofMicroelectronics549其它陶瓷基板材料主要陶瓷基板材料基本性能热导率CTE介电常数拉伸强度滑石和镁橄榄石(W/m°C)(ppm/°C)(@1MHz)(MPa)用于厚膜电路Al2O315-334.3-7.44.5-10与含量相低介电常数关低强度BeO150-3006.3-7.56.7-8.9230低价AlN82-3204.3-4.78.5-10----玻璃、石英、蓝宝石滑石2.1-2.58.6-10.55.5-.7.555.2-69.0镁橄榄石2.1-4.2116.255.2-69.—HighTemperatureCofiredCeramic1500°CMo-—LowTemperatureCofiredCeramic850-900°CAg-Pd,Au,AgorCuHigherwiringdensityInstituteofMicroelectronics57InstituteofMicroelectronics58MCM高密度基板材料金属底座与外壳材料MCM-LMCM-CMCM-DMCM-MCM-SiD/C金属封装的特点是:散热高密度压共烧陶瓷硅、陶瓷共烧陶瓷硅上绝缘好、气密性好、机械强度高。合PCB上的薄膜上的薄膜层Cu工艺性好很好有限有限有限Mo成本中中高高高CuW金属层数〉15〉505〉505W导线间距100-150250-45025-7550-7525SteelandStainlessSteelI/O面面周边面周边Kovarand4J50散热弱很弱好很弱好介电常数3.0-3.59.7<3.0<3.03.5InstituteofMicroelectronics59InstituteofMicroelectronics6010
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