电离辐射中S01 MOSFETs的背栅异常kink效应研究.pdf

gy,ZhongnanUniversity,Changsha410083,China)Abstract:TotaldoseirradiationeffectsofpartiallydepletedSOIMOSFETsarestudiedunderlOkeVX·rayexposure.Resultsshowthatthefront·gatecharacteristicsdonotchangesignificantlyduringirradiation.Ananomalouskinkisobservedintheback·gateloga-urveofbothnMOSandpMOS,whichisattributedtochargedtrapsattheburiedoxide/topsilicon(BOX/SODinterfaceduringirradiation.Two-dimensionalnumericalsimulationusingMEDICIsupportsthisconclusion.Keywords:X-ray;SOIMOSFETs;partiallydepleted;kinkeffect;total-:6180C;7340ArticleID:0253.4177(2008)01.0149.04*ProjectsupportedbytheFoundationofLaboratory(No.9140C0306010604)andtheKeyFoundation(No.A1220060979)tCorrespondingauthor.Email:liujie863@mail·CSU.Received17June2007,revisedmanuscriptreceived13August2007⑥2008ChineseInstituteofElectronics维普资讯