adeAtlargeVBE,Whenp>NB,inverseslopeis120mV/decade.ModernSemiconductorDevicesforIntegratedCircuits(C.Hu)Slide8-*8.3BaseCurrentSomeholesareinjectedfromtheP-typebaseintotheN+emitter.Theholesareprovidedbythebasecurrent,IB.pE'nB'WEWB(b)emitterbasecollectorcontactIEICelectronflow–+holeflowIB(a)contactModernSemiconductorDevicesforIntegratedCircuits(C.Hu)Slide8-*IsalargeIBdesirable?Why?8.3BaseCurrentemitterbasecollectorcontactIEICelectronflow–+holeflowIB(a)contactModernSemiconductorDevicesforIntegratedCircuits(C.Hu)Forauniformemitter,Slide8-*8.mon-emittercurrentgain,mon-basecurrentgain:ItcanbeshownthatModernSemiconductorDevicesforIntegratedCircuits(C.Hu)Slide8-*EXAMPLE:CurrentGainABJThasIC=1mAandIB=10mA.WhatareIE,bFandaF?Solution:WecanconfirmandModernSemiconductorDevicesforIntegratedCircuits(C.Hu)
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