plit CV method.РThe carrier mobilities show a strong dependence on Vbg as the device switches from front to back interface inversion. the electron and hole mobility peak shifts from low-carrier density for Vbg = 0 V, to high-carrier density n ≈ 1013 cm−2 for Vbg = ±8 V.Р8РQuantum Modeling of the Carrier Mobility in FDSOI DevicesРNEGF methodology: The electron band structure is described with a nonparabolic two bands k · p model coupling opposite Δ valleys; and the hole band structure with a three bands k · p model.РIn Si?longitudinal mass Рtransverse massРIn SiO2?isotropic massРbarrier at the interfaceР9РQuantum Modeling of the Carrier Mobility in FDSOI DevicesРNEGF hole density in the device at back gate voltage Vbg = −8 V,for sheet density n increasing from (a) to (c)? (tIL = 1.2 nm).Р10
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