50 source) and the percentage of perimeterРdevices (40%) is large while the drain ring should haveРminimal hot carrier impact on arrays where the sourceРnumber is large (e.g. 800) and the percentage of peri-Рmeter devices is small (2.5%). To verify this, hot carrierРresults were obtained from N-LDMOS arrays withРincreasing source number (Table 3).Р Table 3 displays relative hot carrier lifetime results Fig. 21. Measured internal drain, drain ring and total arrayРfrom LDMOS drain ring arrays with increasing source drain current from a LDMOS drain ring array at Vgs = 1.5 VРnumber. Table 3 shows that unexpected result that the featuring a separate drain ring and internal drain contact.Р Fig. 22. Simulations show that source/drain current lines dip down into N+ buried layer (N + BL) at stress.
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