.1()()3(DFDNnkoTEDNnTkEDTkEEEEDTkEEDDkikikoTEgvci???????????????????????????????????????????????时,室温:pvnc31031202310320223202320106.229.022101.556.022)2(2)2(21.7????????????????????????????????????得)根据(9.计算施主杂质浓度分别为1016cm3,,1018cm-3,1019cm-3的硅在室温下的费米能级,并假定杂质是全部电离,再用算出的的费米能级核对一下,上述假定是否在每一种情况下都成立。计算时,取施主能级在导带底下的面的0.05eV。???????????????????????????????????????????????????????????????3150315031003150212202122020202000031521''313221/1084.4/1084.9500/108/105300)2(2)2(20)(0/109.6)(500/100.2)(300.8cmpcmnKtcmpcmnKTnNNNNpnNNNNnnNNnnnpnNNpncmeNNnKcmeNNnKiDADAiADADiADiADVCiTkEVci时:时:根据电中性条件:时:时:%90-exp(211%10)exp(2111%10%,9005.0)2(27.0.0108.210ln026.0;/10087.0108.210ln026.0;/1021.0108.210ln026.0;/10,ln/105.1/108.2,300,ln.90019193191918318191631603103190???????????????????????????????????????????)DcFF?
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