半导体专业实验补充silvaco器件仿真(毕业论文)

握定义一个完整半导体器件结构的步骤,并能对其电性能进行仿真研究。Р(b)理解场板技术对器件击穿电压提高的作用原理并能结合仿真结果给出初步分析。Р(3)实验过程Р#启动internal,定义结构参数Р# 场板长度从1um增大到2.25um,步长为0.25um,通过改变 l 取值来改变场板长度Рset l= 1.0Р# drain-gate distanceРset Ldg=5.1Р# field plate thicknessРset t=1.77355Р# position fractionРset xc=0.295Р# set trap lifetimeРset lt=1e-7Рset light=1e-5Р# mesh locations based on field plate geometryРset xl=0.9 + $lРset xd=0.9 + $LdgРset y1= 0.3 + $tРset y2= $y1 + 0.02Рset y3= $y2 + 0.04Рset y4= $y2 + 0.18Р# 启动二维器件仿真器Рgo atlasРmesh width=1000?Р# 网格结构Рx.m l=0.0 s=0.1Рx.m l=0.05 s=0.05Рx.m l=0.5 s=0.05Рx.m l=0.9 s=0.025Рx.m l=(0.9+$xl)/2 s=0.05Рx.m l=$xl s=0.025Рx.m l=($xl+$xd)/2 s=0.25Рx.m l=$xd-0.05 s=0.05Рx.m l=$xd s=0.05Р#Рy.m l=0.0 s=0.1000Рy.m l=0.3 s=0.1000Рy.m l=$y1 s=0.0020Рy.m l=$y2 s=0.0020Рy.m l=$y3 s=0.0100Рy.m l=$y4 s=0.0500