2.2 mm РVe(磁心体积) 5250 mm^3 РAl(inductance with 1 turn and without air gap) 2870 nH/N^2 РLoss 2.3 W@100kHz,200mT,100℃РAe*Aw 1.82548 cm^4 Р导线选择Рδ 2.21E-01 mm δ=6.61/sqrt(f)*10 要求所选线径<2*δР线径Р原边导线 0.25 mm 副边导线 0.25 mm Р导线面积 Ap-wire 0.0490625 mm^2 导线面积As-wire 0.049063 mm^2 РRw,导线电阻 0.16 ohm/m 0.320000 ohm/m Р结果Р匝数,turns 取整РNp' 39.98637706 → 40 Np=Lp*Ip-peak/(Bmax*Ae)*10^8 РNs1' 36.35125187 36 Ns=Np/N РN 1.111111 N=Np/Ns РDon-max 0.434554974 Don-max=N*Vout/(Vin-min+N*Vout) РDon-min 0.380733945 Don-min=N*Vout/(Vin-max+N*Vout) РVd-max,diode's reverse voltage 218 V Vd-max=Vin-max/N+Vout РVds-max,MOS's Vds 242.2222222 V Vds-max=Vin-max+Vout*N Р股数,strands РGp 8.060715819 → 9 Gp=Ip-rms/(J*Ap-wire) РGs1 10.85664761 → 10 Gs=Is-rms/(J*As-wire) РKw,窗口利用率 0.187898936 Kw=(Gp*Tp*Ap-wire+Gs*Ts*As-wire)/Aw OK!
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