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TFET工艺仿真

上传者:似水流年 |  格式:docx  |  页数:6 |  大小:35KB

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sistance#extractname="n++sheetrho"sheet.resmaterial="Silicon"mat.o=1x.val=0.05region.o=1#extractthesheetrhounderthespacer,oftheLDDregion#extractname="lddsheetrho"sheet.resmaterial="Silicon"\mat.o=1x.val=0.3region.o=1#extractthesurfaceconcunderthechannel.#extractname="chansurfconc"surf.concimpurity="NetDoping"\material="Silicon"mat.o=1x.val=0.45#extractacurveofconductanceversusbias.#extractstartmaterial="Polysilicon"mat.o=1\bias=0.0bias.step=0.2bias.stop=2x.val=0.45#extractdonename="sheetcondvbias"\curve(bias,1dn.conductmaterial="Silicon"mat.o=1region.o=1)\outfile="extract.dat"#extractthelongchanVt#extractname="n1dvt"1dvtntypevb=0.0qss=1e10x.val=0.49electrodename=gatex=0.5y=0.1electrodename=sourcex=0.1electrodename=drainx=1.1structureoutfile=mosex1_9.str#plotthestructuretonyplotmosex1_9.str

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