铁离子沾污在5×10 11 /cm 3 的水平下对栅氧厚度为70A时是有害的。同时, SP V 等测试无须对测试样片表面进行处理或做进行 MO S结构的工艺加工, 在氧化后即可进行测试,时间上可实现快速测量;采用非接触的方式测试,对硅片表面无污染,无须特殊清洗,测试样片可正常流通或重复利用,这一技术已经逐步被广泛应用于半导体生产,尤其是纳米制程工艺。参考文献: 1.Nicolas Pic ,” In-line 90nm Technology Gate Oxide Nitrogen Monitoring With Non-Contact Electrical Tech- nique ”, Physical Electronics, Inc2007 2. Marshall Wilson, Jacek Lagowski, Alexandre Savtchouk, “ COCOS METROLOGY: PHYSICAL PRINCIPLES AND APPLICATIONS ”, ASTM Conference on Gate Dielectric Oxide Integrity San Jose, California January 1999 3.J.Lagowski et al.“ Iron Detection in the Parts Per Quadrittion Range in Silicon Using Surface Photovoltage and Photo-dissociation of Iron-Boron Pairs. ” Appl.Phys.Lett,Vol.63.pp.3043-3045.1993. 4.W.Henley,L.Jastrzebski,N.Haddad,Mat.Res.Soc.Symp.Proc.,Vol.315.p.299.1993.
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