流进入光耦图РРР4.2.1光偶的一些参数РMaximum Ratings T =25°CРAРEmitterРReverse Voltage?6.0 VРForward Current?60 mAРSurge Current (tW 10 u s)?2.5?AРPower Dissipation?100 mWРDetectorРCollector-Emitter Breakdown Voltage?70?VРРEmitter-Base Breakdown Voltage?7.0?VРCollector Current?50 mAРCollector Current(t <1.0 ms)?100 mAРPower Dissipation?150 mWРPackageРIsolation Test Voltage?5300?VРRMSРCreepage? N7.0 mmРClearance? N7.0?mmРIsolation Thickness between Emitter and Detector? N0.4?mmРComparative Tracking Index per DIN IEC 112/VDE0303, part 1?175РIsolation ResistanceР12РVР=500V,T=25°C?10??РIO AР11РV=500 V,T=100°C?10??РIO AРStorage Temperature?-55°C to +150°CРOperating Temperature?-55?°C to +100°CРJunction Temperature?100°CРSoldering Temperature (max. 10 s, dip soldering:Рdistance to seating plane N1.5 mm)?260° C
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