cs-Wuhan National Laboratory for Optoelectronics,Wuhan 430073,China)РAbstract Aiming at the characteristics of high speed for Q-switch, novel design methods of high speed Q switch driver circuit based on radio frequency field effect transistor is proposed. The main circuit loop equivalent inductance is reduced by selecting high speed radio frequency field effect transistor, special IC driver, components layout and routing meet ism symmetry. Q-switch drive pulse with rise time about 16ns voltage magnitude more than 5000V is obtained though this method. This research provides a reference for the design of high speed high voltage circuit.РKey words electro-optic Q-switch;radio frequency field effect transistor;drive current;ism symmetryР作者简介:张鑫(1979-),男,工程师,主要从事信号处理,模拟电子技术研究。E-mail:xzhanghit@
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