no scale perspective[J]. Mater Sci:Mater. Electron.,2013,24(9):3594-3602.Р[29] YI W T,FEI Y H,TRUAN S L. Microstructure,tensile and electrical properties of gold-coated silver bonding wire[J]. Microelectronics Reliability,2016(55):608-612.Р[30] SINDERMANN S P,LATZ A,DUMPICH G,et al. Lattice dependent motion of voids during electromigration[J]. Appl. Phys.,2013,113(13):134505.Р[31] HAO W H,FEI Y H,TRUAN S L. Effect of the direct current on microstructure,tensile property and bonding strength of pure silver wires[J]. Microelectronics Reliability,2013(53):1159-1163.Р[32] CHRISTOU A. Electromigration and electronic device degradation[J]. Wiley-Interscience,1994:171-173.Р[33] 周文艳,吴永瑾,陈家林. 银丝键合烧球参数对键合质量的影响[J]. 贵金属,2017,38(3):34-38.Р[34] 周文艳,陈家林,康菲菲. 银键合丝力学性能对键合质量的影响[J]. 半导体技术,2017,42(8):615-618.