as:Р1. We present the idea of using a buffer layer of deviation from stoichiometry for materials growth on large lattice mismatch substrates. This idea was realized in nitrides growth in this thesis. The epilayer crystalline quality was improved and the dislocation density was decreased by using GaN low and high temperature buffer layers of deviation from stoichiometry. The RBS/channeling spectra exhibited that the minimum yield χmin of GaN layers was just only 1.5%. The leak electric current of GaN based LED was obviously decreased and lower than 1μA at 5 volt reverse voltage by using this new buffer technology.Р…………РThis work was supported by 863 program in China.Р关键词用Times New Roman小4号加粗、居左顶格、单独占行,关键词之间用分号间隔РKeyword: Nitrides;MOCVD;LED;Photoluminescence;RBS/channeling;Optical absorption
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