hsmayhaveplaceddualsensitivenodescloseenough.Atthispoint,thetheoryfortheCULPRiTSEUresponseisthatataboutanLETof20,theenergydepositionissufficientlywideenough(andintherightlocations)binatoriallogicstreams.IncreasingLETallowsformoreregionstobesensitivetothiseffect,yieldingalargercrosssection.Further,thesecondSEUmechanismthatstartsatanLETofabout40-60hastodowithwhenthechargecollectiondisturbancecloudgetslargeenoughtoeffectivelyupsetmultiplesoftheredundantstoragenodeswithintheSERTcellitself.Inthis0.35μmlibrary,thenodeseparationisseveralmicrons.However,sinceittakeslesschargetoupsetanodeoperatingat0.5Volts,withtransistorshavingeffectivethresholdsaround70mV,thisislikelytheeffectbeingobserved.Alsothefactthattheper-mercialtechnologiesareapproximatelyequal,asshowninFigure9,esensitivetoupset.IX.SUMMARY
全文预览
